1 transistor 2sd1198, 2sd1198a silicon npn epitaxial planer type darlington for low-frequency amplification n features l forward current transfer ratio h fe is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: h fe = 4000 to 40000. l a shunt resistor is omitted from the driver. l m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC71 3:emitter m type mold package 6.9 0.1 0.55 0.1 0.45 0.05 1.0 0.1 1.0 2.5 0.1 1.0 1.5 1.5 r0.9 r0.9 r0.7 0.4 0.85 3.5 0.1 2.0 0.2 2.4 0.2 1.25 0.05 4.1 0.2 4.5 0.1 2.5 2.5 1 2 3 symbol v cbo v ceo v ebo i cp i c p c * t j t stg ratings 30 60 25 50 5 1.5 1 1 150 C55 ~ +150 unit v v v a a w ?c ?c 2sd1198 2sd1198a 2sd1198 2sd1198a n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency symbol i cbo i ebo v cbo v ceo v ebo h fe *1 v ce(sat) v be(sat) f t conditions v cb = 25v, i e = 0 v cb = 45v, i e = 0 v eb = 4v, i c = 0 i c = 100 m a, i b = 0 i c = 1ma, i b = 0 i e = 100 m a, i c = 0 v ce = 10v, i c = 1a *2 i c = 1a, i b = 1ma *2 i c = 1a, i b = 1ma *2 v cb = 10v, i e = C50ma, f = 200mhz min 30 60 25 50 5 4000 typ 150 max 100 100 100 40000 1.8 2.2 unit na na v v v v v mhz internal connection b c e 200 w *1 h fe rank classification rank q r s h fe 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 *2 pulse measurement 2sd1198 2sd1198a 2sd1198 2sd1198a 2sd1198 2sd1198a * printed circuit board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion
2 transistor p c ta v ce(sat) i c v be(sat) i c h fe i c c ob v cb 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 printed circut board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion. ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0.01 0.1 1 10 003 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 003 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =1000 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10 2 10 3 10 4 10 5 v ce =10v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 24 20 16 12 8 4 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 2sd1198, 2sd1198a
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